Compare SiC (Silicon Carbide) and IGBT power semiconductors for EV inverters.

Silicon Carbide (SiC) MOSFETs offer: Lower switching losses (enabling higher switching frequency), higher temperature operation, smaller passive components, and 5-10% efficiency improvement over IGBTs. Challenges include higher cost and limited supply. IGBTs are mature, lower cost, and sufficient for many applications. SiC enables lighter, more compact inverters and contributes to increased range. Most premium and performance EVs now use SiC, while cost-sensitive applications may use IGBTs or hybrid SiC-Si solutions.