What are the advantages of SiC and GaN power devices over silicon?

Wide bandgap semiconductors (SiC, GaN) offer superior properties: higher breakdown field (smaller devices for same voltage), higher thermal conductivity (better heat dissipation), higher operating temperature (175-200C vs 150C), and faster switching (10x lower switching losses). SiC excels at high voltage/power (1200V+, EVs, solar inverters). GaN excels at high frequency (MHz switching, data center power, wireless charging). Costs are decreasing; performance benefits often justify premium, especially in efficiency-critical applications.